Title :
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
Author :
Min Yang ; Gusev, E.P. ; Meikei Ieong ; Gluschenkov, O. ; Boyd, D.C. ; Chan, K.K. ; Kozlowski, P.M. ; D´Emic, C.P. ; Sicina, R.M. ; Jamison, P.C. ; Chou, A.I.
Author_Institution :
Res. Div., IBM Semicond. R&D Center, Yorktown Heights, NY, USA
fDate :
5/1/2003 12:00:00 AM
Abstract :
Dependence of CMOS performance on silicon crystal orientation of [100], [111], and [110] has been investigated with the equivalent gate dielectric thickness less than 3 nm. Hole mobility enhancement of /spl ges/160% has been observed for both oxynitride and HfO2 gate dielectrics on [110] surfaces compared with [100]. CMOS drive current is nearly symmetric on [110] orientation without any degradation of subthreshold slope. For HfO2 gate dielectrics, an approximately 68% enhancement of pMOSFET drive current has been demonstrated on [110] substrates at L/sub poly/=0.12 μm, while current reduction in nMOS is around 26%.
Keywords :
CMOS integrated circuits; MOSFET; crystal orientation; dielectric thin films; electron mobility; hafnium compounds; hole mobility; inversion layers; semiconductor-insulator boundaries; silicon; silicon compounds; substrates; 0.12 micron; 3 nm; CMOS drive current; CMOS performance dependence; HfO/sub 2/; HfO/sub 2/ gate dielectrics; Hole mobility enhancement; MOSFETs; Si; Si crystal orientation; Si substrate orientation; SiON; [100] surfaces; [110] surfaces; [111] surfaces; equivalent gate dielectric thickness; inversion layers; nMOS current reduction; pMOSFET drive current; subthreshold slope; ultrathin oxynitride gate dielectric; Annealing; Chemical vapor deposition; Degradation; Dielectric devices; Dielectric substrates; Hafnium oxide; Leakage current; MOSFETs; Research and development; Silicon;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.812565
