Power level-dependent dual-operating mode LDMOS power amplifier for CDMA wireless base-station applications

Author

Chung, Younkyu ; Jeong, Jinseong ; Wang, Yuanxun ; Ahn, Dal ; Itoh, Tatsuo

Author_Institution

Dept. of Electr. Eng., Univ. of California, Los Angeles, CA

Volume

53

Issue

2

fYear

2005

Firstpage

739

Lastpage

746

Abstract

The design and analysis of a dual-operating mode laterally diffused metal-oxide semiconductor (LDMOS) power amplifier for code-division multiple-access wireless communication base-station applications is presented in this paper. The amplifier structure consists of four parallelly located single-stage LDMOS amplifier array, the dual-mode input power divider, and output power combiner. In this dual-mode operation, the number of operating power amplifier (either one or four amplifiers) is controlled depending on the required power level. This results in significant improvement in efficiency performance of the amplifier by minimizing unnecessary dc power consumption. In addition to the enhancement of efficiency, the amplifier design approach also provides better overall linearity performance. The proposed dual-operating mode design technique was successfully demonstrated by designing, implementing, and testing an LDMOS power amplifier with Motorola MRF 21030 in this study

Keywords

3G mobile communication; MISFET; code division multiple access; power amplifiers; power combiners; power consumption; power dividers; power semiconductor devices; radiofrequency amplifiers; semiconductor device testing; wideband amplifiers; CDMA wireless base station applications; Motorola MRF 21030; amplifier structure; code division multiple access wireless communication; dc power consumption; dual mode input power divider; laterally diffused metal-oxide-semiconductor; output power combiner; power level dependent dual operating mode LDMOS power amplifier; semiconductor device testing; single stage LDMOS amplifier array; Communication system control; Energy consumption; MOS devices; Multiaccess communication; Operational amplifiers; Power amplifiers; Power dividers; Power generation; Semiconductor optical amplifiers; Wireless communication; Adjacent channel leakage power ratio (ACLR); characteristic impedance; code division multiple access (CDMA); coupled-line coupler; laterally diffused metal–oxide semiconductor (LDMOS); power amplifier; power-added efficiency (PAE);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2004.841220

Filename

1393220