DocumentCode :
1234525
Title :
Power level-dependent dual-operating mode LDMOS power amplifier for CDMA wireless base-station applications
Author :
Chung, Younkyu ; Jeong, Jinseong ; Wang, Yuanxun ; Ahn, Dal ; Itoh, Tatsuo
Author_Institution :
Dept. of Electr. Eng., Univ. of California, Los Angeles, CA
Volume :
53
Issue :
2
fYear :
2005
Firstpage :
739
Lastpage :
746
Abstract :
The design and analysis of a dual-operating mode laterally diffused metal-oxide semiconductor (LDMOS) power amplifier for code-division multiple-access wireless communication base-station applications is presented in this paper. The amplifier structure consists of four parallelly located single-stage LDMOS amplifier array, the dual-mode input power divider, and output power combiner. In this dual-mode operation, the number of operating power amplifier (either one or four amplifiers) is controlled depending on the required power level. This results in significant improvement in efficiency performance of the amplifier by minimizing unnecessary dc power consumption. In addition to the enhancement of efficiency, the amplifier design approach also provides better overall linearity performance. The proposed dual-operating mode design technique was successfully demonstrated by designing, implementing, and testing an LDMOS power amplifier with Motorola MRF 21030 in this study
Keywords :
3G mobile communication; MISFET; code division multiple access; power amplifiers; power combiners; power consumption; power dividers; power semiconductor devices; radiofrequency amplifiers; semiconductor device testing; wideband amplifiers; CDMA wireless base station applications; Motorola MRF 21030; amplifier structure; code division multiple access wireless communication; dc power consumption; dual mode input power divider; laterally diffused metal-oxide-semiconductor; output power combiner; power level dependent dual operating mode LDMOS power amplifier; semiconductor device testing; single stage LDMOS amplifier array; Communication system control; Energy consumption; MOS devices; Multiaccess communication; Operational amplifiers; Power amplifiers; Power dividers; Power generation; Semiconductor optical amplifiers; Wireless communication; Adjacent channel leakage power ratio (ACLR); characteristic impedance; code division multiple access (CDMA); coupled-line coupler; laterally diffused metal–oxide semiconductor (LDMOS); power amplifier; power-added efficiency (PAE);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2004.841220
Filename :
1393220
Link To Document :
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