Title :
Dynamic Characterization of Distortion in Hybrid Silicon Evanescent Phase Modulators
Author :
Nunoya, Nobuhiro ; Ramaswamy, Anand ; Chen, Hui-Wen ; Sysak, Matthew N. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
fDate :
7/1/2009 12:00:00 AM
Abstract :
We report the dynamic distortion of hybrid silicon phase modulators for three types of active layers. The third-order intermodulation distortion for each modulator was measured under various bias conditions by means of a two-tone technique. A peak phase input intercept point of 2.6pi for doped quantum-well modulators was achieved at a reverse bias of 4 V and a signal frequency of around 500 MHz.
Keywords :
electro-optical modulation; elemental semiconductors; intermodulation distortion; phase modulation; semiconductor quantum wells; silicon; Si; dynamic characterization; frequency 500 MHz; hybrid silicon evanescent phase modulator; quantum-well modulator; third-order intermodulation distortion; two-tone technique; voltage 4 V; Carrier depletion; phase modulators; quantum confined Stark effect (QCSE); silicon-on-insulator technology;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2009.2019623
