DocumentCode
1234627
Title
Dynamic Characterization of Distortion in Hybrid Silicon Evanescent Phase Modulators
Author
Nunoya, Nobuhiro ; Ramaswamy, Anand ; Chen, Hui-Wen ; Sysak, Matthew N. ; Bowers, John E.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA
Volume
21
Issue
13
fYear
2009
fDate
7/1/2009 12:00:00 AM
Firstpage
833
Lastpage
835
Abstract
We report the dynamic distortion of hybrid silicon phase modulators for three types of active layers. The third-order intermodulation distortion for each modulator was measured under various bias conditions by means of a two-tone technique. A peak phase input intercept point of 2.6pi for doped quantum-well modulators was achieved at a reverse bias of 4 V and a signal frequency of around 500 MHz.
Keywords
electro-optical modulation; elemental semiconductors; intermodulation distortion; phase modulation; semiconductor quantum wells; silicon; Si; dynamic characterization; frequency 500 MHz; hybrid silicon evanescent phase modulator; quantum-well modulator; third-order intermodulation distortion; two-tone technique; voltage 4 V; Carrier depletion; phase modulators; quantum confined Stark effect (QCSE); silicon-on-insulator technology;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2019623
Filename
4813273
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