DocumentCode :
1234802
Title :
Analysis of active pixel sensor readout circuit
Author :
Salama, Khaled ; El Gamal, Abbas
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Volume :
50
Issue :
7
fYear :
2003
fDate :
7/1/2003 12:00:00 AM
Firstpage :
941
Lastpage :
945
Abstract :
This work provides a detailed analysis of active pixel sensor, pixel and column circuit. Surprisingly, we find that shorter readout times can be achieved by reducing the bias current and hence reducing energy consumption. We investigate the effect of nonidealities on the readout operation. We find that when the follower transistor channel-length modulation is taken into consideration, delay is reduced, which implies that shorter length transistors can be used in the pixel. We show that readout time decreases linearly with technology scaling.
Keywords :
CMOS image sensors; delays; readout electronics; APS; active pixel sensor readout circuit; bias current reduction; column circuit; delay reduction; energy consumption reduction; follower transistor channel-length modulation; high-speed imaging; nonidealities; readout times; technology scaling; CMOS image sensors; CMOS technology; Capacitors; Circuit analysis; Delay; Digital cameras; Energy consumption; Optical imaging; Optical sensors; Voltage;
fLanguage :
English
Journal_Title :
Circuits and Systems I: Fundamental Theory and Applications, IEEE Transactions on
Publisher :
ieee
ISSN :
1057-7122
Type :
jour
DOI :
10.1109/TCSI.2003.813977
Filename :
1211095
Link To Document :
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