Characterization of the transient behavior of a GaAs MESFET using dynamic I-V and S-parameter measurements

Author

Begin, M. ; Ghannouchi, Fadhel M. ; Beauregard, Frangois ; Selmi, Luca ; Ricco, Bruno

Author_Institution

Dept. de Genie Electr. et de Genie Inf., Ecole Polytech. de Montreal, Que., Canada

Volume

45

Issue

1

fYear

1996

fDate

2/1/1996 12:00:00 AM

Firstpage

231

Lastpage

237

Abstract

Dynamic I-V and S-parameter characterization of a medium-power MESFET is presented. In particular, this paper presents an innovative fully automated six-port network analyzer (SPNA) operated in pulse conditions. The results reveal the transient behavior of the GaAs MESFET under pulse conditions which may be attributed to self-heating and/or trap-related anomalies. Furthermore, using standard procedure, these S-parameters could readily be used to extract the dynamic electrical model elements (C_gs, C_gd, G_ds, G_m, etc.) of the MESFET. This system is particularly suitable for studying trap-related phenomena and self-heating effects in GaAs devices and for large-signal/power characterization

Keywords

III-V semiconductors; S-parameters; Schottky gate field effect transistors; calibration; characteristics measurement; gallium arsenide; microwave reflectometry; network analysers; semiconductor device testing; transients; GaAs; GaAs MESFET; S-parameter measurements; dynamic I-V; medium-power MESFET; transient behavior; Gallium arsenide; High power amplifiers; Integrated circuit technology; MESFETs; Phase shifters; Power generation; Radio frequency; Reflection; Scattering parameters; Senior members;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.481339

Filename

481339