Title :
Fabrication of thick silicon nitride blocks for integration of RF devices
Author :
Fernández, L.J. ; Berenschot, E. ; Sesé, J. ; Wiegerink, R.J. ; Flokstra, J. ; Jansen, H.V. ; Elwenspoek, M.
Author_Institution :
Univ. of Twente, Enschede
Abstract :
A fabrication process for the creation of thick (tens of micrometres) silicon nitride blocks embedded in silicon wafers has been developed. This new technology allows the use of silicon nitride as dielectric material for radio frequency (RF) circuits on standard CMOS-grade silicon wafers. Measurement results show that a performance similar to that of dedicated glass substrates can be reached
Keywords :
CMOS integrated circuits; chemical vapour deposition; coplanar waveguides; dielectric materials; dielectric thin films; etching; microwave integrated circuits; silicon compounds; RF circuits; RF devices; SiN; dielectric material; radiofrequency circuits; silicon nitride blocks; standard CMOS-grade silicon wafers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057499
