Title :
Efficient breakdown voltage doubler for 10 Gbit/s SiGe modulator drivers
Author :
Li, D.U. ; Tsai, C.M.
Author_Institution :
SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu
Abstract :
A novel intrinsic collector-base capacitance (CCB) feedback network was incorporated into the series-connected voltage balancing (SCVB) circuit configuration to implement 10 Gbit/s SiGe modulator drivers. The driver fabricated in 0.35 mum SiGe BiCMOS process could output 9 VPP differential output swing with rise/fall time (20 to 80%) less than 27 ps. Compared with drivers using only SCVB, the power consumption could be greatly reduced from 2 to 1 W
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; capacitance; circuit feedback; driver circuits; optical communication equipment; optical modulation; semiconductor materials; voltage multipliers; 0.35 micron; 10 Gbit/s; 9 V; SiGe; SiGe BiCMOS process; SiGe modulator drivers; breakdown voltage doubler; differential output swing; intrinsic collector-base capacitance feedback network; power consumption; series connected voltage balancing circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057575
