Title :
1.3 V low close-in phase noise NMOS LC-VCO with parallel PMOS transistors
Author :
Moon, H. ; Nam, I.
Author_Institution :
Syst. LSI, RF Dev. Team, Samsung Electron., Seoul
Abstract :
A new NMOS cross-coupled LC-VCO with parallel PMOS transistors is proposed. The proposed LC-VCO is useful for suppressing flicker noise upconversion and very suitable for low voltage application. It is implemented in 0.18 mum CMOS technology and has superior characteristics to a conventional complementary LC-VCO. Measured phase noise is -93 dBc/Hz at 100 kHz and -116 dBc/Hz at 1 MHz offsets and its core current is only 2 mA for a 1.3 V supply voltage.
Keywords :
CMOS integrated circuits; MOSFET; voltage-controlled oscillators; CMOS technology; NMOS LC-VCO; current 2 mA; flicker noise upconversion; frequency 1 MHz; frequency 100 kHz; parallel PMOS transistor; size 0.18 micron; voltage 1.3 V;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080404