Highly reliable die attachment on polished GaAs surfaces using gold-tin eutectic alloy

Author

Lee, Chin C. ; Matijasevic, Goran S.

Author_Institution

Dept. of Electr. Eng., California Univ., Irvine, CA, USA

Volume

12

Issue

3

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

406

Lastpage

409

Abstract

GaAs test dice with polished surfaces were successfully bonded on alumina substrates using Au-Sn alloy. The bonding process was carried out in H₂ or N₂ atmosphere with applied static pressure, but without the use of scrubbing. The quality of the bonds was examined by a scanning acoustic microscope (SAM) having a spatial resolution of 25 μm. After 100 cycles of thermal shock between -196°C to +160°C, perfectly bonded devices remained perfect, as confirmed by the SAM images. No void was induced, and the dice did not crack. The results of a shear test indicate that the strength of the bondings is greater than that of the GaAs dice

Keywords

III-V semiconductors; acoustic microscopy; environmental testing; gallium arsenide; gold alloys; microassembling; reliability; thermal shock; tin alloys; -196 to 160 C; Al₂O₃; AuSn eutectic alloy; GaAs-AuSn-Al₂O₃; H₂ atmosphere; N₂ atmosphere; SAM; applied static pressure; polished GaAs surfaces; reliable die attachment; scanning acoustic microscope; shear test; spatial resolution; thermal shock test; voidfree attachment; Acoustic devices; Acoustic testing; Bonding processes; Chromium; Electric shock; Gallium arsenide; Gold alloys; Microscopy; Thermal stresses; Wafer bonding;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.35490

Filename

35490