DocumentCode :
1235150
Title :
Dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors
Author :
Lee, S.-Y. ; Hyung, J.-H. ; Lee, S.-K.
Author_Institution :
Dept. of Semicond. Sci. & Technol., Chonbuk Nat. Univ., Jeonju
Volume :
44
Issue :
11
fYear :
2008
Firstpage :
695
Lastpage :
696
Abstract :
Straightforward and successful dielectrophoresis (DEP)-prepared multiple-channel ZnO nanowire field-effect transistors (FETs) are reported, in which the DEP is used to align and manipulate ZnO nanowires. The DEP-prepared multi-channel ZnO nanowire FETs can manage on-current exceeding ~ 1 muA at low bias voltages.
Keywords :
electrophoresis; field effect transistors; nanowires; zinc compounds; ZnO; dielectrophoresis; field-effect transistor; multiple-channel nanowire;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20080019
Filename :
4531525
Link To Document :
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