Title :
Effect of fluoride plasma treatment on InAlN/GaN HEMTs
Author :
Medjdoub, F. ; Alomari, M. ; Carlin, J.-F. ; Gonschorek, M. ; Feltin, E. ; Py, M.A. ; Gaquière, C. ; Grandjean, N. ; Kohn, E.
Author_Institution :
Inst. of Electron Devices & Circuits, Univ. of Ulm, Ulm
Abstract :
Fluoride plasma treatment similar to that used in AlGaN/GaN HEMTs has been applied to InAlN/GaN HEMTs. Enhancement mode of operation is obtained with a pinch-off voltage shifted by 3 V. Owing to the fluoride treatment an increase of the forward gate threshold to 3.5 V is observed. The small-signal performances are essentially unchanged. The thermal stability of this process has been assessed for the first time and appears to be limited to approximately 500degC.
Keywords :
aluminium compounds; high electron mobility transistors; thermal stability; HEMT; InAlN-GaN; fluoride plasma treatment; pinch-off voltage; thermal stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20080864
