Title :
Threshold voltage and mobility mismatch compensated analogue buffer for driver-integrated poly-Si TFT LCDs
Author :
Yoo, C. ; Kim, D.-J. ; Lee, K.-L.
Author_Institution :
Div. of Electr. & Comput. Eng., Hanyang Univ., Seoul, South Korea
Abstract :
An analogue buffer for driver-integrated poly-Si TFT LCDs is described where large mismatches of poly-Si TFT in threshold voltage and mobility are compensated. The buffer has a very simple configuration consisting of an nMOS, a pMOS, three switches, and a capacitor. Because of its simple and compact architecture, the panel size can be kept small even with integrated driver circuits. The measurement results show the analogue data buffer can achieve 4.5 bit resolution.
Keywords :
MOSFET; analogue processing circuits; buffer circuits; capacitors; driver circuits; elemental semiconductors; liquid crystal displays; semiconductor switches; silicon; Si; analogue data buffer; bit resolution; capacitor; driver integrated poly Si TFT LCD; integrated driver circuits; liquid crystal display; metal oxide semiconductor; mobility mismatch compensated analogue buffer; nMOS poly Si TFT; pMOS poly Si TFT; panel size; switches; thin film transistor; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057284
