Title :
ESD protection for 10 Gbit/s optical receivers
Author :
Sun, M. ; Lu, Y.
Author_Institution :
Vitesse Semicond. Inc., Somerset, NJ, USA
Abstract :
The ESD protection of high-speed RF ICs used in 10 Gbit/s optical receivers with InGaP heterojunction bipolar transistor (HBT) technology is presented. The frequency response of a 10 Gbit/s optical receiver with ESD protection is directly measured. The results indicate that the new ESD circuit can effectively protect input/output pins while with negligible loading effect.
Keywords :
III-V semiconductors; bipolar integrated circuits; electrostatic discharge; frequency response; gallium compounds; heterojunction bipolar transistors; indium compounds; optical receivers; protection; radiofrequency integrated circuits; 10 Gbit/s; ESD protection; HBT; InGaP; InGaP heterojunction bipolar transistor technology; electrostatic discharge protection; frequency response; high speed RF IC; loading effect; optical receivers; radiofrequency integrated circuits;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057280
