Title :
1.53 μm GaInNAsSb laser diodes grown on GaAs(100)
Author :
Gupta, J.A. ; Barrios, P.J. ; Zhang, X. ; Pakulski, G. ; Wu, X.
Author_Institution :
Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
Abstract :
GaInNAsSb/GaNAs double quantum well ridge waveguide laser diodes with room temperature lasing wavelength of 1532 nm are reported. The devices exhibit leakage-corrected threshold current densities as low as 969 A cm-2 per quantum well in pulsed mode, with characteristic temperatures as high as 90 K.
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; indium compounds; leakage currents; molecular beam epitaxial growth; quantum well lasers; ridge waveguides; semiconductor epitaxial layers; semiconductor growth; waveguide lasers; wide band gap semiconductors; 1532 nm; 293 to 298 K; GaInNAsSb-GaNAs; GaInNAsSb-GaNAs double quantum well ridge waveguide laser diodes; lasing wavelength; room temperature; threshold current densities;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057623
