Title :
High-power and tunable operation of erbium-ytterbium Co-doped cladding-pumped fiber lasers
Author :
Nilsson, Johan ; Alam, Shaif-ul ; Alvarez-Chavez, Jose A. ; Turner, Paul W. ; Clarkson, W. Andrew ; Grudinin, Anatoly B.
Author_Institution :
Optoelectronics Res. Centre, Univ. of Southampton, UK
Abstract :
We describe erbium-ytterbium co-doped fiber lasers in different free-running and tunable configurations. The lasers were cladding-pumped by high-power multimode diode sources. We compare pumping at 915 and 980 nm. With a free-running laser, we obtained slope efficiencies of up to 50% with 915-nm pumping and 38% with 980-nm pumping, with respect to absorbed pump power. We reached a double-ended output power of 16.8 W from the free-running laser. Thanks to a high rare-earth concentration and a small inner cladding area (possible with the high-brightness pump sources we used), the operating pump absorption of the fiber reached 8 dB/m. With such high absorption, short fibers with high nonlinear thresholds are possible even with cladding pumping. The tunable fiber laser had a tuning range from 1533 to 1600 nm and emitted 6.7 W of output power at 1550nm in a high-brightness, single-polarization, narrow linewidth beam.
Keywords :
erbium; fibre lasers; laser tuning; optical fibre cladding; optical pumping; ytterbium; 1533 to 1600 nm; 1550 nm; 16.8 W; 6.7 W; 915 nm; 980 nm; P2O5-SiO2:Er,Yb; absorbed pump power; double-ended output power; erbium-ytterbium co-doped cladding-pumped fiber lasers; free-running configurations; high absorption; high nonlinear thresholds; high rare-earth concentration; high-brightness pump sources; high-brightness single-polarization narrow linewidth beam; high-power multimode diode sources; operating pump absorption; output power; phosphosilicate glass; short fibers; slope efficiencies; small inner cladding area; tunable operation; Absorption; Diodes; Erbium-doped fiber lasers; Laser beams; Laser excitation; Laser tuning; Power generation; Power lasers; Pump lasers; Tunable circuits and devices;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2003.814373