Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers

Author

Feltin, E. ; Butté, R. ; Carlin, J.-F. ; Dorsaz, J. ; Grandjean, N. ; Ilegems, M.

Author_Institution

Ecole Polytechnique Fed. de Lausanne, Switzerland

Volume

41

Issue

2

fYear

2005

Firstpage

94

Lastpage

95

Abstract

Very narrow spontaneous emission (Δλ∼0.5 nm), corresponding to a quality factor Q in excess of 800, has been obtained under continuous-wave excitation at room temperature with an AlInN/GaN monolithic microcavity. The structure is made of thin In_xGa_1-xN/GaN (x=0.15) multiple quantum wells inserted in a GaN 3λ/2 (λ=420 nm) cavity surrounded by lattice-matched AlInN/GaN distributed Bragg reflectors.

Keywords

III-V semiconductors; Q-factor; aluminium compounds; distributed Bragg reflectors; gallium compounds; indium compounds; microcavity lasers; optoelectronic devices; quantum well lasers; spontaneous emission; surface emitting lasers; wide band gap semiconductors; 293 to 298 K; 420 nm; AlInN-GaN; DBR; GaN monolithic microcavity; In_xGa_1-xN-GaN; MQM; VCSEL; continuous wave excitation; lattice matched distributed Bragg reflectors; multiple quantum wells; nitride based vertical cavity surface emitting lasers; quality factor; room temperature; very narrow spontaneous emission;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20057334

Filename

1393493