DocumentCode :
1235375
Title :
High-resistivity polycrystalline silicon as RF substrate in wafer-level packaging
Author :
Polyakov, A. ; Sinaga, S. ; Mendes, P.M. ; Bartek, M. ; Correia, J.H. ; Burghartz, J.N.
Author_Institution :
Lab. of High-Frequency Technol. & Components, Delft Inst. of Microelectron. & Submicrontechnology, Netherlands
Volume :
41
Issue :
2
fYear :
2005
Firstpage :
100
Lastpage :
101
Abstract :
High-resistivity polycrystalline silicon (HRPS) is presented as a novel low-cost and low-loss substrate for radio-frequency (RF) passive components in wafer-level packaging and integrated passive networks. A record quality factor (Q=11; 1 GHz; 34 nH) and very low loss (0.65 dB/cm; 17 GHz) are demonstrated for inductors and coplanar waveguides, respectively, on HRPS.
Keywords :
Q-factor; chip scale packaging; coplanar waveguides; dielectric losses; elemental semiconductors; passive networks; silicon; wafer-scale integration; 1 GHz; 17 GHz; RF passive components; RF substrate; Si; coplanar waveguides; dielectric constant; dielectric losses; high resistivity polycrystalline silicon; inductors; integrated passive networks; low cost substrates; low loss substrate; quality factor; radio frequency passive components; thermal conductivity; thermal expansion; wafer level packaging;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20056872
Filename :
1393497
Link To Document :
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