Title :
Irradiation induced weak spots in SiO2 gate oxides of MOS devices observed with C-AFM
Author :
Porti, M. ; Nafría, M. ; Aymerich, X. ; Cester, A. ; Paccagnella, A. ; Cimino, S.
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Bellaterra, Spain
Abstract :
A nanoscale characterisation of the electrical conduction of irradiated thin SiO2 gate oxides of MOS devices has been performed with a conductive atomic force microscope. The electrical images reveal the existence of weak spots, which have been attributed to the electrical damage induced by irradiation. Although their I-V characteristics show a leaky behaviour, these locations have not experienced a hard breakdown event.
Keywords :
MIS devices; atomic force microscopy; electrical conductivity; ion beam effects; leakage currents; nanostructured materials; silicon compounds; C-AFM; I-V characteristics; MOS devices; SiO2; conductive atomic force microscopy; current-voltage characteristics; electrical conduction; electrical damage; electrical images; irradiated thin SiO2 gate oxides; irradiation induced weak spots; leaky properties;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20057289
