Switch-level simulation of total dose effects on CMOS VLSI circuits

Author

Bhuva, Bharat L. ; Paulos, John J. ; Gyurcsik, Ronald S. ; Kerns, Sherra E.

Author_Institution

Dept. of Electr. & Biomed. Eng., Vanderbilt Univ., Nashville, TN, USA

Volume

8

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

933

Lastpage

938

Abstract

The effects of radiation exposure on the performance of CMOS integrated circuits are difficult to predict and to simulate due to the bias-dependent device parameter shifts. Simulation methodologies for identification of failure mechanisms and performance estimation are developed. These simulation algorithms are implemented in the PARA simulator for switch-level simulation of radiation effects. Simulation results for test circuits are presented that prove that accurate estimations are possible without CPU-intensive simulation programs

Keywords

CMOS integrated circuits; VLSI; digital simulation; electronic engineering computing; failure analysis; radiation effects; CMOS VLSI circuits; PARA simulator; bias-dependent device parameter shifts; failure mechanisms; integrated circuits; performance estimation; radiation effects; radiation exposure; simulation algorithms; switch-level simulation; total dose effects; CMOS technology; Circuit simulation; Circuit testing; Computational modeling; Computer simulation; Design automation; Failure analysis; Radiation effects; Switching circuits; Very large scale integration;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.35545

Filename

35545