Title :
Schwarz-Christoffel transformation for the simulation of two-dimensional capacitance [VLSI circuits]
Author :
Koç, Ç K. ; Ordung, P.F.
Author_Institution :
Dept. of Electr. Eng., Houston Univ., TX, USA
fDate :
9/1/1989 12:00:00 AM
Abstract :
An inherent problem in the use of simulators for the determination of capacitance in VLSI circuits is the verification of the reliability of the simulation. The problem is due to the numerical approximations made in order to achieve a versatile simulation. The Schwarz-Christoffel transformation provides theoretically exact simulation of a limited class of problems consisting of two odd shaped conductors embedded in a uniform dielectric. It is proposed that the Schwarz-Christoffel technique can be used to calibrate simulators designed for more general problems
Keywords :
VLSI; capacitance; digital simulation; electronic engineering computing; Schwarz-Christoffel transformation; VLSI circuits; embedded conductors; simulation; simulator calibration; two-dimensional capacitance; uniform dielectric; Benchmark testing; Built-in self-test; CMOS logic circuits; Circuit faults; Circuit simulation; Computational modeling; Logic design; Parasitic capacitance; Programmable logic arrays; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on