DocumentCode
1235616
Title
Angular dependence of magnetization reversal process in patterned Co thin films
Author
Liu, Z.Y. ; Adenwalla, S.
Author_Institution
Dept. of Phys. & Astron., Nebraska Univ., Lincoln, NE, USA
Volume
39
Issue
4
fYear
2003
fDate
7/1/2003 12:00:00 AM
Firstpage
2074
Lastpage
2077
Abstract
We measured longitudinal and transverse magnetooptic Kerr effect loops to understand the angular dependence of magnetization reversal in an array of 5 μm × 25 μm rectangular thin Co bars with uniaxial anisotropy. When the magnetic field is applied close to the hard axis, the reversal is dominated by coherent rotation; when the field is applied close to the easy axis, the reversal is caused by domain-wall unpinning and the coercive fields observe the relation Hc = H0/cos θ0. For the other orientations, the magnetization first rotates smoothly at larger fields and then switches irreversibly by domain-wall unpinning.
Keywords
Kerr magneto-optical effect; arrays; cobalt; discontinuous metallic thin films; magnetic anisotropy; magnetic domain walls; magnetic fields; magnetic hysteresis; magnetic thin films; magnetisation reversal; 25 micron; 5 micron; Co; MOKE; angular dependence; array; coercive fields; coherent rotation; domain-wall nucleation; domain-wall unpinning; longitudinal magnetooptic Kerr effect loops; magnetic field; magnetization reversal; patterned Co thin films; transverse magnetooptic Kerr effect loops; uniaxial anisotropy; Anisotropic magnetoresistance; Bars; Kerr effect; Magnetic field measurement; Magnetic fields; Magnetic hysteresis; Magnetization reversal; Magnetooptic effects; Semiconductor process modeling; Transistors;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2003.814290
Filename
1211185
Link To Document