• DocumentCode
    1235616
  • Title

    Angular dependence of magnetization reversal process in patterned Co thin films

  • Author

    Liu, Z.Y. ; Adenwalla, S.

  • Author_Institution
    Dept. of Phys. & Astron., Nebraska Univ., Lincoln, NE, USA
  • Volume
    39
  • Issue
    4
  • fYear
    2003
  • fDate
    7/1/2003 12:00:00 AM
  • Firstpage
    2074
  • Lastpage
    2077
  • Abstract
    We measured longitudinal and transverse magnetooptic Kerr effect loops to understand the angular dependence of magnetization reversal in an array of 5 μm × 25 μm rectangular thin Co bars with uniaxial anisotropy. When the magnetic field is applied close to the hard axis, the reversal is dominated by coherent rotation; when the field is applied close to the easy axis, the reversal is caused by domain-wall unpinning and the coercive fields observe the relation Hc = H0/cos θ0. For the other orientations, the magnetization first rotates smoothly at larger fields and then switches irreversibly by domain-wall unpinning.
  • Keywords
    Kerr magneto-optical effect; arrays; cobalt; discontinuous metallic thin films; magnetic anisotropy; magnetic domain walls; magnetic fields; magnetic hysteresis; magnetic thin films; magnetisation reversal; 25 micron; 5 micron; Co; MOKE; angular dependence; array; coercive fields; coherent rotation; domain-wall nucleation; domain-wall unpinning; longitudinal magnetooptic Kerr effect loops; magnetic field; magnetization reversal; patterned Co thin films; transverse magnetooptic Kerr effect loops; uniaxial anisotropy; Anisotropic magnetoresistance; Bars; Kerr effect; Magnetic field measurement; Magnetic fields; Magnetic hysteresis; Magnetization reversal; Magnetooptic effects; Semiconductor process modeling; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2003.814290
  • Filename
    1211185