L- and S-band low-noise cryogenic GaAs FET amplifiers

Author

De Panfilis, S. ; Rogers, J.

Author_Institution

Dept. of Phys. & Astron., Rochester Univ., NY, USA

Volume

36

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

607

Lastpage

610

Abstract

The authors present the results of the construction and testing of three cryogenic low-noise GaAs FET amplifiers, based on a National Radio Astronomy Observatory design, to be used in a detector for the axion, a hypothetical particle. The amplifiers are centered on 1.1 GHz, and 2.4 GHz, have a gain of approximately 30 dB in bandwidths of 300 MHz, 225 MHz, and 310 MHz, and have minimum noise temperatures of 7.8 K, 8 K, and 15 K, respectively

Keywords

III-V semiconductors; astronomical instruments; cosmic ray apparatus; gallium arsenide; intermediate bosons; low-temperature techniques; microwave amplifiers; semiconductor counters; solid-state microwave circuits; 1.1 GHz; 15 K; 2.4 GHz; 225 MHz; 30 dB; 300 MHz; 310 MHz; 7.8 K; 8 K; GaAs; L-band; National Radio Astronomy Observatory; S-band; UHF; astronomical instruments; axion; cryogenic low-noise GaAs FET amplifiers; detector; hypothetical particle; minimum noise temperatures; Bandwidth; Cryogenics; Detectors; FETs; Gallium arsenide; Low-noise amplifiers; Observatories; Radio astronomy; Temperature; Testing;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3557

Filename

3557