Title :
Development toward high-speed integrated circuits and SQUID qubits with Nb/AlOx/Nb Josephson junctions
Author :
Chen, W. ; Patel, Vijay ; Tolpygo, Sergey K. ; Yohannes, D. ; Pottorf, S. ; Lukens, J.E.
Author_Institution :
Dept. of Phys., State Univ. of New York, Stony Brook, NY, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
Our Nb/AlOx/Nb planarized process has been upgraded by adding extra dielectric and Nb wiring layers and the installation of an Inductively Coupled Plasma (ICP) etcher. Much higher quartz etch rates as well as reduced residue are achieved with ICP etch. Etch uniformities of both Nb and quartz are also improved significantly. Damage to Nb during the fabrication process has been investigated. We have found that dry etching in SF6 plasma has a significant effect on the quality of Nb films under certain conditions with damage coinciding with the presence of in situ deposited Al.
Keywords :
Josephson effect; SQUIDs; aluminium compounds; high-speed integrated circuits; niobium; planarisation; quartz; sputter etching; superconducting integrated circuits; ICP etcher; Nb; Nb damage; Nb film quality; Nb wiring layers; Nb-AlOx-Nb; Nb/AlOx/Nb Josephson junctions; Nb/AlOx/Nb planarized process; SF6; SF6 plasma; SQUID qubits; SiO2; dielectric layers; dry etching; etch uniformity improvement; high-speed ICs; inductively coupled plasma etcher; quartz etch rates; residue reduction; superconducting ICs; Dry etching; Fabrication; High speed integrated circuits; Josephson junctions; Niobium; Plasma applications; Quantum computing; Superconducting devices; Superconducting films; Wiring;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.813656
