DocumentCode
1236151
Title
Ti quadlevel resist process for the fabrication of Nb SIS junctions
Author
Clark, William W. ; Zhang, Jian Z. ; Lichtenberger, Arthur W.
Author_Institution
Dept. of Electr. Eng., Univ. of Virginia, Charlottesville, VA, USA
Volume
13
Issue
2
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
115
Lastpage
118
Abstract
We have fabricated high quality Nb/Al-oxide/Nb Superconductor-Insulator-Superconductor (SIS) junctions using a Ti-based quadlevel resist process. The quadlevel materials have been carefully chosen to optimize the fluorine-based anisotropic reactive ion etching of Nb and subsequent insulation coverage of the junctions in a self-aligned process. This SIS fabrication process enables excellent control of junction size and is also compatible with Au overlayer junction and junction anodization approaches.
Keywords
niobium; resists; sputter etching; superconductor-insulator-superconductor devices; titanium; Nb-AlO-Nb; Nb/Al-oxide/Nb SIS junction; Ti; Ti quadlevel resist; anisotropic reactive ion etching; fabrication process; insulation process; self-aligned process; Anisotropic magnetoresistance; Etching; Fabrication; Insulation; Josephson junctions; Niobium; Resists; Size control; Superconducting devices; Superconducting materials;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2003.813659
Filename
1211555
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