Title :
Ti quadlevel resist process for the fabrication of Nb SIS junctions
Author :
Clark, William W. ; Zhang, Jian Z. ; Lichtenberger, Arthur W.
Author_Institution :
Dept. of Electr. Eng., Univ. of Virginia, Charlottesville, VA, USA
fDate :
6/1/2003 12:00:00 AM
Abstract :
We have fabricated high quality Nb/Al-oxide/Nb Superconductor-Insulator-Superconductor (SIS) junctions using a Ti-based quadlevel resist process. The quadlevel materials have been carefully chosen to optimize the fluorine-based anisotropic reactive ion etching of Nb and subsequent insulation coverage of the junctions in a self-aligned process. This SIS fabrication process enables excellent control of junction size and is also compatible with Au overlayer junction and junction anodization approaches.
Keywords :
niobium; resists; sputter etching; superconductor-insulator-superconductor devices; titanium; Nb-AlO-Nb; Nb/Al-oxide/Nb SIS junction; Ti; Ti quadlevel resist; anisotropic reactive ion etching; fabrication process; insulation process; self-aligned process; Anisotropic magnetoresistance; Etching; Fabrication; Insulation; Josephson junctions; Niobium; Resists; Size control; Superconducting devices; Superconducting materials;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.813659
