The influence of ion-implanted profiles on the performance of GaAs MESFET´s and MMIC amplifiers

Author

Pavlidis, Dimitris ; Cazaux, Jean-Louis ; Graffeuil, Jacques

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

Volume

36

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

642

Lastpage

652

Abstract

The RF small-signal performance of GaAs MESFETs and MMIC amplifiers as a function of various ion-implanted profiles is theoretically and experimentally investigated. Implantation energy, dose, and recess-depth influence are theoretically analyzed with the help of a novel device simulator. The performance of MMIC amplifiers processed with various energies, doses, recess depths, and bias conditions is discussed and compared to experimental characteristics. Some criteria are proposed for the choice of implantation conditions and process in order to optimize the characteristics of ion-implanted FETs and to realize process-tolerant MMIC amplifiers

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; ion implantation; microwave amplifiers; microwave integrated circuits; solid-state microwave devices; GaAs; III-V semiconductor; MESFETs; MMIC amplifiers; RF small-signal performance; bias conditions; implantation dose; implantation energy; ion-implanted profiles; microwave devices; monolithic microwave IC; process tolerant circuits; recess-depth influence; Analytical models; Circuit simulation; Computational modeling; Doping profiles; Equivalent circuits; Gallium arsenide; MESFET circuits; MMICs; Radiofrequency amplifiers; Semiconductor process modeling;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3568

Filename

3568