One-chip GaAs monolithic frequency converter operable to 4 GHz

Author

Shigaki, Masafumi ; Yokogawa, Shigeru ; Takano, Takeshi ; Yamada, Katsura

Author_Institution

Fujitsu Labs. Ltd., Kawasaki, Japan

Volume

36

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

653

Lastpage

658

Abstract

The frequency converter combines a feedback amplifier, a differential amplifier, a double-balanced mixer, a voltage-controlled oscillator, and an IF amplifier on a 1-mm² GaAs chip. The FET circuits were matched by digital IC design rather than by the distributed element network technique, to use the substrate more effectively. Self-aligned WSi/Au gates 1.5 μm long were used, and the resistance in conventional WSi gates was reduced to enhance microwave characteristics. At 4 GHz, the conversion gain is 18 dB, the double-sideband noise is 11.8 dB and the output power is 5.6 dBm

Keywords

III-V semiconductors; field effect integrated circuits; frequency convertors; gallium arsenide; microwave integrated circuits; 1.5 micron; 11.8 dB; 18 dB; 4 GHz; DSB noise; FET circuits; GaAs monolithic frequency converter; IF amplifier; III-V semiconductor; MMIC; SHF; WSi-Au; conversion gain; differential amplifier; double-balanced mixer; double-sideband noise; feedback amplifier; self-aligned gates; voltage-controlled oscillator; Differential amplifiers; Digital integrated circuits; FET circuits; FET integrated circuits; Feedback amplifiers; Frequency conversion; Gallium arsenide; Microwave FET integrated circuits; Mixers; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3569

Filename

3569