Title :
Growth and characterization of high yield, reliable, high-power, high-speed, InP/InGaAsP capped mesa buried heterostructure distributed feedback (CMBH-DFB) lasers
Author :
Zilko, J.L. ; Ketelsen, L.J.P. ; Twu, Y. ; Wilt, D.P. ; Napoltz, S.G. ; Blaha, J.P. ; Strege, K.E. ; Riggs, V.G. ; Van Haren, D.L. ; Leung, S.Y. ; Nitzche, P.M. ; Long, J.A. ; Roxlo, C.B. ; Przyblek, G. ; Lopata, J. ; Focht, M.W. ; Koszi, L.A.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
10/1/1989 12:00:00 AM
Abstract :
The capped-mesa buried-heterostructure distributed-feedback (CMBH-DFB) laser structure requires three epitaxial growths and is designed to allow good control of the width of the active layer using straightforward chemical etching techniques. The base structure, which contains the active layer, was fabricated using a variety of epitaxial techniques: liquid-phase epitaxy, hydride vapor-phase epitaxy (VPE) and metalorganic vapor-phase epitaxy (MOVPE). The final cap growth was done using hydride VPE. High yields of low-threshold high-power DFB lasers were produced from a number of wafers at emission wavelengths of 1.3 and 1.55 μm
Keywords :
III-V semiconductors; distributed feedback lasers; etching; gallium arsenide; indium compounds; laser transitions; liquid phase epitaxial growth; optical workshop techniques; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 1.55 micron; III-V semiconductor; InP-InGaAsP; Si wafers; active layer; active layer width control; base structure; base structure fabrication; capped mesa buried heterostructure distributed feedback lasers; chemical etching techniques; emission wavelengths; epitaxial growths; epitaxial techniques; final cap growth; high-power lasers; high-speed lasers; high-yield lasers; hydride vapor-phase epitaxy; laser structure growth; liquid-phase epitaxy; low-threshold lasers; metalorganic vapor-phase epitaxy; Bandwidth; Chemical lasers; Distributed feedback devices; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Laser feedback; Optical device fabrication; Surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
