DocumentCode
1236999
Title
Passive and Active Reduction Techniques for On-Chip High-Frequency Digital Power Supply Noise
Author
Bohannon, Eric ; Urban, Christopher ; Pude, Mark ; Nishi, Yoshinori ; Gopalan, Anand ; Mukund, P.R.
Author_Institution
Dept. of Electr. Eng., Rochester Inst. of Technol., Rochester, NY, USA
Volume
18
Issue
1
fYear
2010
Firstpage
157
Lastpage
161
Abstract
Signal integrity has become a major problem in digital IC design. One cause is device scaling that results in a sharp reduction of supply voltage, creating stringent noise margin requirements to ensure functionality. This paper introduces both a novel on-chip decoupling capacitance methodology and active noise cancellation (ANC) structure. The decoupling methodology focuses on quantification and location. The ANC structure, with an area of 50 ??m ?? 55 ??m, uses decoupling capacitance to sense noise and inject a proportional current into VSS as a method of reduction. A chip has been designed and fabricated using TSMC´s 90-nm technology. Measurements show that the decoupling methodology improved the average voltage headroom loss by 17% while the ANC structure improved the average voltage headroom loss by 18%.
Keywords
active networks; digital integrated circuits; high-frequency effects; integrated circuit noise; passive networks; power supply circuits; TSMC; active noise cancellation; average voltage headroom loss; decoupling methodology; digital IC design; onchip decoupling capacitance methodology; onchip high-frequency digital power supply noise; passive-active reduction techniques; signal integrity; size 90 nm; stringent noise margin requirements; supply voltage; Active noise cancellation (ANC); decoupling capacitance; on-chip interconnect; power distribution; power supply noise;
fLanguage
English
Journal_Title
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher
ieee
ISSN
1063-8210
Type
jour
DOI
10.1109/TVLSI.2008.2008305
Filename
4814469
Link To Document