DocumentCode :
1236999
Title :
Passive and Active Reduction Techniques for On-Chip High-Frequency Digital Power Supply Noise
Author :
Bohannon, Eric ; Urban, Christopher ; Pude, Mark ; Nishi, Yoshinori ; Gopalan, Anand ; Mukund, P.R.
Author_Institution :
Dept. of Electr. Eng., Rochester Inst. of Technol., Rochester, NY, USA
Volume :
18
Issue :
1
fYear :
2010
Firstpage :
157
Lastpage :
161
Abstract :
Signal integrity has become a major problem in digital IC design. One cause is device scaling that results in a sharp reduction of supply voltage, creating stringent noise margin requirements to ensure functionality. This paper introduces both a novel on-chip decoupling capacitance methodology and active noise cancellation (ANC) structure. The decoupling methodology focuses on quantification and location. The ANC structure, with an area of 50 ??m ?? 55 ??m, uses decoupling capacitance to sense noise and inject a proportional current into VSS as a method of reduction. A chip has been designed and fabricated using TSMC´s 90-nm technology. Measurements show that the decoupling methodology improved the average voltage headroom loss by 17% while the ANC structure improved the average voltage headroom loss by 18%.
Keywords :
active networks; digital integrated circuits; high-frequency effects; integrated circuit noise; passive networks; power supply circuits; TSMC; active noise cancellation; average voltage headroom loss; decoupling methodology; digital IC design; onchip decoupling capacitance methodology; onchip high-frequency digital power supply noise; passive-active reduction techniques; signal integrity; size 90 nm; stringent noise margin requirements; supply voltage; Active noise cancellation (ANC); decoupling capacitance; on-chip interconnect; power distribution; power supply noise;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2008.2008305
Filename :
4814469
Link To Document :
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