Title :
High-speed GaAs dynamic frequency divider using a double-loop structure and differential amplifiers
Author :
Shigaki, Masafumi ; Saito, Tamio ; Kusakawa, Hirotsugu ; Kurihara, Hiroshi
Author_Institution :
Fujitsu Labs. Ltd., Nakahara-ku, Japan
fDate :
4/1/1988 12:00:00 AM
Abstract :
GaAs 2.0-8.0-GHz and 6.0-10.5-GHz dynamic frequency dividers have been developed. These dynamic dividers have a double-loop structure using a differential amplifier for high-speed and stable operation despite supply-voltage fluctuations. This structure operates from a single voltage supply. An advanced WSi self-aligned gate process technology (0.1-μm long gate) was used to improve the high-frequency characteristics of the FET
Keywords :
III-V semiconductors; field effect integrated circuits; frequency dividers; gallium arsenide; microwave integrated circuits; 0.1 micron; 2 to 10.5 GHz; FET; GaAs; III-V semiconductors; LLD structure; MMIC; SHF; WSi; differential amplifiers; double-loop structure; dynamic frequency divider; high-frequency characteristics; high-speed; monolithic microwave IC; self-aligned gate process technology; stable operation; voltage supply; Circuits; Differential amplifiers; FETs; Frequency conversion; Gallium arsenide; Inverters; Oscillators; Power supplies; Variable structure systems; Voltage fluctuations;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
