High-speed GaAs dynamic frequency divider using a double-loop structure and differential amplifiers

Author

Shigaki, Masafumi ; Saito, Tamio ; Kusakawa, Hirotsugu ; Kurihara, Hiroshi

Author_Institution

Fujitsu Labs. Ltd., Nakahara-ku, Japan

Volume

36

Issue

4

fYear

1988

fDate

4/1/1988 12:00:00 AM

Firstpage

772

Lastpage

774

Abstract

GaAs 2.0-8.0-GHz and 6.0-10.5-GHz dynamic frequency dividers have been developed. These dynamic dividers have a double-loop structure using a differential amplifier for high-speed and stable operation despite supply-voltage fluctuations. This structure operates from a single voltage supply. An advanced WSi self-aligned gate process technology (0.1-μm long gate) was used to improve the high-frequency characteristics of the FET

Keywords

III-V semiconductors; field effect integrated circuits; frequency dividers; gallium arsenide; microwave integrated circuits; 0.1 micron; 2 to 10.5 GHz; FET; GaAs; III-V semiconductors; LLD structure; MMIC; SHF; WSi; differential amplifiers; double-loop structure; dynamic frequency divider; high-frequency characteristics; high-speed; monolithic microwave IC; self-aligned gate process technology; stable operation; voltage supply; Circuits; Differential amplifiers; FETs; Frequency conversion; Gallium arsenide; Inverters; Oscillators; Power supplies; Variable structure systems; Voltage fluctuations;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.3587

Filename

3587