Title :
Nano-power subthreshold current-mode logic in sub-100 nm technologies
Author :
Cannillo, F. ; Toumazou, C.
Author_Institution :
Circuits & Syst. Res. Group, Imperial Coll. London, UK
Abstract :
The feasibility of robust MOS current-mode logic (MCML) digital circuits operated in subthreshold regime is investigated. The design of a subthreshold MCML inverter gate in a 90 nm CMOS technology is presented together with the evaluation of its DC performance.
Keywords :
CMOS logic circuits; current-mode circuits; integrated circuit design; logic design; logic gates; nanoelectronics; 90 nm; CMOS logic circuits; MCML digital circuits; MOS current-mode logic digital circuits; current-mode circuits; integrated circuit design; logic design; logic gates; nano-power subthreshold current-mode logic circuits; nanoelectronics; subthreshold MCML inverter gate;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053082
