Title :
Chalcogenide-Nanowire-Based Phase Change Memory
Author :
Yu, Bin ; Sun, Xuhui ; Ju, Sanghyun ; Janes, David B. ; Meyyappan, M.
Author_Institution :
NASA Ames Res. Center, Moffett Field, CA
fDate :
7/1/2008 12:00:00 AM
Abstract :
We report fabrication of phase change random access memory (PRAM) using nanowires (NWs) of GeTe and In2Se3. NWs were grown by a vapor-liquid-solid technique and ranged from 40 to 80 nm in diameter and several micrometers long. A dynamic switching ratio (on/off ratio) of 2200 and 2 times 105 was realized for GeTe and indium selenide devices, respectively. The programming power for the RESET operation is only tens of microwatts compared to the milliwatt power levels required by the conventional thin-film-based PRAM.
Keywords :
chalcogenide glasses; germanium compounds; indium compounds; nanowires; random-access storage; selenium compounds; semiconductor storage; tellurium compounds; GeTe; In2Se3; chalcogenide-nanowire; conventional thin-film-based PRAM; indium selenide devices; phase change random access memory; size 40 nm to 80 nm; vapor-liquid-solid technique; Chalcogenide; Phase change random access memory; chalcogenide; nanoelectronics; nanowires; nanowires (NWs); phase change random access memory (PRAM);
Journal_Title :
Nanotechnology, IEEE Transactions on
DOI :
10.1109/TNANO.2008.926374
