Title :
Zinc Tin Oxide Thin-Film-Transistor Enhancement/Depletion Inverter
Author :
Heineck, Daniel P. ; McFarlane, Brian R. ; Wager, John F.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Oregon State Univ., Corvallis, OR
fDate :
5/1/2009 12:00:00 AM
Abstract :
A fabrication process to create a zinc tin oxide (ZTO) thin-film-transistor (TFT) enhancement/depletion inverter using 15-mum channel lengths is developed. Both enhancement- and depletion-mode staggered bottom-gate ZTO TFTs are simultaneously fabricated on a single substrate using a single sputter target and postdeposition anneal step. At a rail voltage of 10 V, this inverter has a gain of 10.6 V/V.
Keywords :
annealing; invertors; thin film transistors; zinc compounds; ZnSnO; depletion-mode staggered bottom-gate TFT; enhancement-mode staggered bottom-gate ZTO TFT; inverter gain; postdeposition annealing; single sputter target; size 15 mum; voltage 10 V; zinc tin oxide thin film transistor inverter; Amorphous oxide semiconductor (AOS); enhancement/depletion (E/D) inverter; oxide electronics; thin-film transistor (TFT); zinc tin oxide (ZTO);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2017496
