Title :
Measurement of modal gain in 1.1 μm p-doped tunnel injection InGaAs/GaAs quantum dot laser heterostructures
Author :
Mi, Z. ; Fathpour, S. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, USA
Abstract :
Single-pass optical gain of self-assembled InGaAs/GaAs p-doped tunnel injection quantum dot laser heterostructures emitting at 1.1 μm is measured by the multisection device technique. The heterostructures, consisting of three layers of quantum dots in the active region, demonstrate net modal gain as high as 57 cm-1.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; multilayers; quantum dot lasers; self-assembly; semiconductor heterojunctions; semiconductor quantum dots; 1.1 micron; III-V semiconductors; InGaAs-GaAs; modal gain measurement; multilayers; multisection device technique; p-doped tunnel injection quantum dot laser heterostructures; quantum dot layers; semiconductor heterojunctions; semiconductor quantum dots; single-pass optical gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053374
