• DocumentCode
    1237424
  • Title

    Experimental gallium nitride microwave Doherty amplifier

  • Author

    Lees, J. ; Benedikt, J. ; Hilton, K.P. ; Powell, J. ; Balmer, R.S. ; Uren, M.J. ; Martin, T. ; Tasker, P.J.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Cardiff Univ., UK
  • Volume
    41
  • Issue
    23
  • fYear
    2005
  • Firstpage
    1284
  • Lastpage
    1285
  • Abstract
    The combination of gallium nitride (GaN) device technology with the now well established efficiency enhancing Doherty power amplifier (PA) architecture is presented for the first time. The experimental structure exhibits a power density of approximately 1 W/mm and linearity that remains comparable to that observed in other GaAs structures, demonstrating that GaN can be highly effective when used within this type of PA architecture.
  • Keywords
    gallium compounds; microwave power amplifiers; power semiconductor devices; wide band gap semiconductors; Doherty power amplifier; GaN; field effect devices; gallium nitride device technology; gallium nitride microwave Doherty amplifier; microwave power amplifiers; wide band gap semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20053155
  • Filename
    1541774
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1237424