Extraction Efficiency Enhancement of GaN-Based Light-Emitting Diodes by Microhole Array and Roughened Surface Oxide

Author

Lai, Fang-I ; Ling, S.C. ; Hsieh, C.E. ; Hsueh, T.H. ; Kuo, Hao-Chung ; Lu, Tien-Chang

Author_Institution

Dept. of Electr. Eng., Yuan Ze Univ., Chungli

Volume

30

Issue

5

fYear

2009

fDate

5/1/2009 12:00:00 AM

Firstpage

496

Lastpage

498

Abstract

The light-output power of GaN-based light-emitting diodes (LEDs) was enhanced by microhole array pattern and roughened GaO_x film grown on the exposed surface. The GaO_x film was grown by photoelectrochemical (PEC) oxidation via H₂O and formed a naturally rough oxide surface and GaO_x/GaN interface. Compared with that of conventional broad-area LEDs, the output power of the microhole array LED and the surface-oxidized microhole array LED increased by 1.38 and 1.82 times at 20-mA forward current, respectively. The results show that the microhole array pattern with the roughened surface oxide method could significantly enhance light extraction efficiency and be a candidate for manufacturing high-efficient low-cost GaN-based LEDs.

Keywords

III-V semiconductors; gallium compounds; light emitting diodes; oxidation; photoelectrochemistry; wide band gap semiconductors; GaO_x-GaN; current 20 mA; light extraction efficiency; light-emitting diodes; light-output power; microhole array pattern; naturally rough oxide surface; photoelectrochemical oxidation; surface-oxidized microhole array LED; Extraction efficiency; GaN; light-emitting diode (LED); photoelectrochemical (PEC);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2016766

Filename

4814513