Title :
Two-layer dielectric microstrip line structure: SiO2 on Si and GaAs on Si: modeling and measurement
Author :
Lawton, R.A. ; Anderson, Wallace T.
Author_Institution :
NBS, Boulder, CO, USA
fDate :
4/1/1988 12:00:00 AM
Abstract :
Further development is reported of the modeling of the two-layer dielectric microstrip line structure by computing the scattering parameter S21 derived from the model and comparing the computed value with the measured value over the frequency range from 90 MHz to 18 GHz. The sensitivity of the phase of S21, and the magnitude of the characteristic impedance to various parameters of the equivalent circuit is also discussed. Examples are given of the measurement and modeling of the SiO 2 on silicon system to 18 GHz and the modeling of the GaAs on silicon system to 100 GHz
Keywords :
III-V semiconductors; S-parameters; electric impedance; elemental semiconductors; equivalent circuits; gallium arsenide; semiconductor devices; silicon; silicon compounds; strip lines; waveguide theory; 90 MHz to 100 GHz; GaAs-Si; SiO2-Si; characteristic impedance; dielectric microstrip line structure; equivalent circuit; scattering parameter; semiconductors; two layer structure; Anisotropic magnetoresistance; Dielectric measurements; Gallium arsenide; Geometrical optics; Gyrotropism; Microstrip; Optical films; Optical propagation; Optical waveguides; Polarization;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
