Title :
p-i-n diode attenuator with small phase shift
Author :
Baeten, Robert J. ; Ishii, T. Koryu ; Hyde, James S.
fDate :
4/1/1988 12:00:00 AM
Abstract :
A computer-aided design technique for minimizing spurious phase shift in microstrip p-i-n diode attenuators is presented. At 9 GHz, a spurious phase shift of 0.17°/dB attenuation has been realized at 15-dB attenuation. This is better than the previous reported value (H. Imai, 1974) of 1°/dB attenuation at comparable operating frequencies and attenuations. The diode mounting location and the DC blocking chip capacitors on microstrip are important, among other parameters, to minimize the spurious phase shift
Keywords :
attenuators; circuit CAD; semiconductor diodes; solid-state microwave circuits; strip line components; 9 GHz; CAD; DC blocking chip capacitors; PIN device; SHF; computer-aided design technique; diode mounting location; microstrip; microwave circuits; p-i-n diode attenuator; small phase shift; spurious phase shift minimisation; Attenuators; Circuits; Coaxial components; Electrons; Gallium arsenide; MESFETs; Microstrip; P-i-n diodes; Silicon; Substrates;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
