DocumentCode :
1237880
Title :
Probing the phase diagram of Bi2Sr2CaCu2O8+δ with tunneling spectroscopy
Author :
Ozyuzer, L. ; Zasadzinski, J.F. ; Gray, K.E. ; Hinks, D.G. ; Miyakawa, N.
Author_Institution :
Dept. of Phys., Izmir Inst. of Technol., Turkey
Volume :
13
Issue :
2
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
893
Lastpage :
896
Abstract :
Tunneling measurements are performed on Ca-rich single crystals of Bi2Sr2CaCu2O8+δ (Bi2212), with various oxygen doping levels, using a novel point contact method. At 4.2 K, SIN and SIS tunnel junctions are obtained with well-defined quasiparticle peaks, robust dip and hump features and in some cases Josephson currents. The doping dependence of tunneling conductances of Ca-rich Bi2212 are analyzed and compared to stoichiometric Bi2212. A similar profile of energy gap vs. doping concentration is found although the Ca-rich samples have a slightly smaller optimum Tc and therefore smaller gap values for any doping level. The evolution of tunneling conductance peak height to background ratios with hole concentration are compared. For a given doping level, the Ca-rich spectra showed more broadened features compared to the stoichiometric counterparts, most likely due to increased disorder from the excess Ca. Comparison of the dip and hump features has provided some potential insights into their origins.
Keywords :
bismuth compounds; calcium compounds; high-temperature superconductors; phase diagrams; stoichiometry; strontium compounds; superconducting energy gap; superconductive tunnelling; 4.2 K; Bi2Sr2CaCu2O8+δ; Ca-rich single crystals; Josephson currents; background ratios; doping dependence; doping levels; energy gap; high temperature superconductor; hole concentration; phase diagram; point contact method; quasiparticle peaks; robust dip features; robust hump features; stoichiometric; tunneling conductance peak height; tunneling spectroscopy; Bismuth; Doping; High temperature superconductors; Josephson junctions; Robustness; Silicon compounds; Spectroscopy; Strontium; Superconducting devices; Tunneling;
fLanguage :
English
Journal_Title :
Applied Superconductivity, IEEE Transactions on
Publisher :
ieee
ISSN :
1051-8223
Type :
jour
DOI :
10.1109/TASC.2003.814072
Filename :
1211748
Link To Document :
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