Title :
Monolithically integrated InGaAs-P-I-N InP-MISFET PINFET grown by chloride vapor phase epitaxy
Author :
Antreasyan, A. ; Garbinski, P.A. ; Mattera, V.D., Jr. ; Temkin, H. ; Olsson, N.A. ; Filipe, J.
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
The authors report the preparation and performance of a monolithically integrated InGaAs p-i-n detector InP metal-insulator-semiconductor field-effect transistor (PINFET) receiver. The device was grown by two-step chloride vapor-phase epitaxy. The sensitivity of the receiver was measured as -33.9 and -25.4 dBm at 200 and 600 Mb/s, respectively, at a bit-error-rate of 10/sup -9/ and a wavelength of 1.55 mu m. It is noted that the performance of the PINFET receiver is currently limited by the thermal noise of the load resistance R/sub L/, which is 5 k Omega .<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; optical communication equipment; receivers; semiconductor growth; vapour phase epitaxial growth; 1.55 micron; 200 Mbit/s; 5 kohm; 600 Mbit/s; Cl vapour phase epitaxy; InGaAs-InP; PINFET receiver; bit-error-rate; load resistance; metal-insulator-semiconductor field-effect transistor; monolithically integrated; p-i-n detector; receiver sensitivity; semiconductor; thermal noise; vapor-phase epitaxy; Detectors; Electrical resistance measurement; Epitaxial growth; FETs; Indium gallium arsenide; Indium phosphide; Metal-insulator structures; PIN photodiodes; Thermal resistance; Wavelength measurement;
Journal_Title :
Photonics Technology Letters, IEEE
