Title :
100 kW DC biased, all semiconductor switch using Si P-I-N diodes and AlGaAs 2-D laser arrays
Author :
Rosen, A. ; Stabile, P.J. ; Gombar, A.M. ; Janton, W.M. ; Bahasadri, A. ; Herczfeld, P.
Author_Institution :
David Sarnoff Res. Center, Princeton, NJ, USA
fDate :
6/1/1989 12:00:00 AM
Abstract :
A two-dimensional laser array, delivering a peak power of 1 kW with an overall efficiency of 33%, was used to activate silicon p-i-n diodes. A single device, activated by a 1 kW laser, produced a holding voltage of 1000 V and conducted 56 A. When two similar p-i-n diodes were connected in parallel and activated by two 1 kW AlGaAs laser arrays, a holding voltage of 1000 V and conduction of 100 A were obtained.<>
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium arsenide; optical switches; p-i-n diodes; photodiodes; semiconductor junction lasers; semiconductor switches; silicon; 1 kW; 100 kW; 1000 V; 2-D laser arrays; 33 percent; 56 A; AlGaAs; DC biased switch; P-I-N diodes; Si; all semiconductor switch; holding voltage; integrated optoelectronics; peak power; High speed optical techniques; Optical arrays; Optical pulses; Optical saturation; Optical switches; P-i-n diodes; Semiconductor laser arrays; Solid lasers; Switching circuits; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
