Title :
Josephson effects in MgB2 metal masked ion damage junctions
Author :
Kang, Dae-Joon ; Peng, N.H. ; Jeynes, C. ; Webb, R. ; Lee, H.N. ; Oh, B. ; Moon, S.H. ; Burnell, G. ; Stelmashenko, N.A. ; Tarte, E.J. ; Moore, D.F. ; Blamire, M.G.
Author_Institution :
Dept. of Mater. Sci., Univ. of Cambridge, UK
fDate :
6/1/2003 12:00:00 AM
Abstract :
We have successfully fabricated high quality Josephson junctions in MgB2 thin films by a combination of 30 kV focused Ga ion beam nanolithography and 50 keV proton ion beam irradiation. The junctions show resistively shunted junction like current-voltage characteristics with additional excess current. Monte Carlo simulation results for the optimized mask structure and experimental results for the dc and ac Josephson effects are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.
Keywords :
Josephson effect; ion beam effects; ion beam lithography; ion implantation; magnesium compounds; nanolithography; proton effects; type II superconductors; 30 kV; 50 keV; 50 keV proton ion beam irradiation; Ga; H; Josephson effects; Josephson junctions; MgB2; MgB2 metal masked ion damage junctions; Monte Carlo simulation; excess current; focused Ga ion beam nanolithography; high-density integration; resistively shunted junction; Fabrication; Ion beams; Josephson effect; Josephson junctions; Materials reliability; Materials science and technology; Moon; Nanotechnology; Superconductivity; Transistors;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2003.814157
