DocumentCode
1238219
Title
Josephson effects in MgB2 metal masked ion damage junctions
Author
Kang, Dae-Joon ; Peng, N.H. ; Jeynes, C. ; Webb, R. ; Lee, H.N. ; Oh, B. ; Moon, S.H. ; Burnell, G. ; Stelmashenko, N.A. ; Tarte, E.J. ; Moore, D.F. ; Blamire, M.G.
Author_Institution
Dept. of Mater. Sci., Univ. of Cambridge, UK
Volume
13
Issue
2
fYear
2003
fDate
6/1/2003 12:00:00 AM
Firstpage
1071
Lastpage
1074
Abstract
We have successfully fabricated high quality Josephson junctions in MgB2 thin films by a combination of 30 kV focused Ga ion beam nanolithography and 50 keV proton ion beam irradiation. The junctions show resistively shunted junction like current-voltage characteristics with additional excess current. Monte Carlo simulation results for the optimized mask structure and experimental results for the dc and ac Josephson effects are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.
Keywords
Josephson effect; ion beam effects; ion beam lithography; ion implantation; magnesium compounds; nanolithography; proton effects; type II superconductors; 30 kV; 50 keV; 50 keV proton ion beam irradiation; Ga; H; Josephson effects; Josephson junctions; MgB2; MgB2 metal masked ion damage junctions; Monte Carlo simulation; excess current; focused Ga ion beam nanolithography; high-density integration; resistively shunted junction; Fabrication; Ion beams; Josephson effect; Josephson junctions; Materials reliability; Materials science and technology; Moon; Nanotechnology; Superconductivity; Transistors;
fLanguage
English
Journal_Title
Applied Superconductivity, IEEE Transactions on
Publisher
ieee
ISSN
1051-8223
Type
jour
DOI
10.1109/TASC.2003.814157
Filename
1211791
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