Title :
High-stability 1.5 mu m external-cavity semiconductor lasers for phase-lock applications
Author :
Kahn, J.M. ; Burrus, C.A. ; Raybon, G.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
Applications using phase-locked semiconductor lasers, such as homodyne detection, require lasers with narrow linewidth and high-frequency stability. The design and operating characteristics of two 1.5 mu m external-cavity semiconductor lasers built for such applications are described. The measured beat linewidth is 4 kHz, and the spectral density of relative frequency noise deviates significantly from the intrinsic white spectrum only at frequencies below 4 kHz. It is estimated that this frequency jitter will induce approximately 1.1 degrees RMS phase error in a second-order homodyne optical phase-lock loop that is optimized for the present beat linewidth.<>
Keywords :
electron device noise; laser cavity resonators; laser frequency stability; laser transitions; phase-locked loops; semiconductor junction lasers; spectral line breadth; 1.5 micron; RMS phase error; beat linewidth; design; frequency jitter; high stability external cavity semiconductor lasers; high-frequency stability; homodyne detection; intrinsic white spectrum; narrow linewidth; operating characteristics; phase-lock applications; relative frequency noise; second-order homodyne optical phase-lock loop; spectral density; Density measurement; Frequency estimation; Frequency measurement; Laser noise; Laser stability; Noise measurement; Optical design; Optical noise; Phase detection; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
