Title :
Biaxial stress effects on the TE/TM polarization switching of InGaAsP ridge-waveguide lasers
Author :
Maciejko, R. ; Berger, J. ; Champagne, A. ; Glinski, J.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada
fDate :
7/1/1989 12:00:00 AM
Abstract :
TE/TM (transverse electric/magnetic) polarization switching in ridge-waveguide InGaAsP lasers is analyzed with due considerations to biaxial stress effects on both the waveguiding and gain properties of the device. The conditions of switching for several models are established. In particular, the gain expression for uniaxial stress is extended to include biaxial stress, and the differences between the different models are presented.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser theory; light polarisation; optical waveguides; piezo-optical effects; semiconductor junction lasers; III-V semiconductor; InGaAsP; InGaAsP ridge-waveguide lasers; TE/TM polarization switching; biaxial stress effects; gain expression; gain properties; waveguiding; Compressive stress; Laser modes; Laser theory; Optical design; Optical modulation; Permittivity; Polarization; Signal design; Thermal stresses;
Journal_Title :
Photonics Technology Letters, IEEE
