Depletion edge translation waveguide crossing optical switch

Author

Huang, T.C. ; Hausken, T. ; Lee, K. ; Dagli, N. ; Coldren, L.A. ; Myers, D.R.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

1

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

168

Lastpage

170

Abstract

A waveguide crossing optical switch using the depletion edge translation concept is described. By using a single AlGaAs/GaAs material growth and ion implantation technology, an impedance discontinuity is formed at the intersection of two waveguides. Switching operation has been observed, and a high-speed, small-device-size, and high-extinction-ratio optical switch are expected.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; ion implantation; optical communication equipment; optical switches; optical waveguides; semiconductor switches; AlGaAs-GaAs; III-V semiconductor; depletion edge translation concept; high-extinction-ratio; high-speed; impedance discontinuity; ion implantation technology; single AlGaAs/GaAs material growth; small-device-size; waveguide crossing optical switch; High speed optical techniques; Impedance; Optical devices; Optical reflection; Optical signal processing; Optical switches; Optical waveguides; Particle beam optics; Waveguide discontinuities; Waveguide junctions;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.36027

Filename

36027