Title :
Long-wavelength GaAs/AlAs distributed Bragg reflectors for use in GaSb-based resonant cavity detectors
Author :
Mansoor, Fahad ; Grey, R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll. London
fDate :
2/2/1995 12:00:00 AM
Abstract :
Two GaAs/AlAs Bragg reflector stacks were designed for operation at 1.68 μm and 2.2 μm to be used in resonant cavity photodetectors. The mirrors were grown by solid source MBE, and measured reflectivities were in excess of 95 and 85%, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; infrared detectors; integrated optoelectronics; mirrors; molecular beam epitaxial growth; optical resonators; photodetectors; 1.68 micron; 2.2 micron; GaAs-AlAs; GaAs/AlAs Bragg reflector stacks; GaSb; GaSb-based resonant cavity detectors; IR detectors; distributed Bragg reflectors; long-wavelength DBR; mirrors; photodetectors; reflectivities; solid source MBE;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950113
