Title :
High efficiency AlGaInP-based 660-680 nm vertical-cavity surface emitting lasers
Author :
Hagerott Crawford, M. ; Schneider, R.P. ; Choquette, Kent D. ; Lear, K.L. ; Kilcoyne, S.P. ; Figiel, Jeffery J.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
fDate :
2/2/1995 12:00:00 AM
Abstract :
Record continuous-wave output power of 2.9 mW and 10% peak wallplug efficiency have been achieved from planar gain guided AlGaInP-based vertical-cavity surface emitting lasers. These results represent nearly an order of magnitude improvement in performance over previous AlGaInP-based vertical-cavity lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; surface emitting lasers; 2.9 mW; 660 to 680 nm; AlGaInP; CW output; continuous-wave output power; high efficiency operation; planar gain guided VCSEL; surface emitting lasers; vertical-cavity SEL; wallplug efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950124
