Title :
Dynamic properties of 1.3 μm semi-insulating-BH light-emission-and-detection (LEAD)-diode module for subscriber TCM transmission systems
Author :
Kurosaki, T. ; Tohmori, Y. ; Fukuda, M. ; Nakamura, M. ; Kimura, H. ; Matsumoto, S. ; Sugie, T.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
2/2/1995 12:00:00 AM
Abstract :
The dynamic properties of a 1.3 μm light-emission-and-detection (LEAD)-diode module that has a high mesa semi-insulating buried heterostructure (SI-BH) to reduce the capacitance of the chip (0.6-0.8 pF) are described. A modulation bandwidth of 12 GHz in laser diode (LD) operation, and detection bandwidth of ~1.9 GHz in photodetector (PD) operation are achieved using a chip and a module, respectively. In bit error rate (BER) performance at 30 Mbit/s, a receiver sensitivity (BER=10-8) of -37.4 dBm is confirmed, and a switching time of under 1 μs from LD to PD operation is estimated using a circuit simulator
Keywords :
capacitance; digital communication; error statistics; laser beam applications; modules; multiplexing equipment; optical communication equipment; optical fibre subscriber loops; optical modulation; photodetectors; semiconductor lasers; 0.6 to 0.8 pF; 1.3 micron; 1.9 GHz; 12 GHz; 30 Mbit/s; BER performance; LEAD diode module; bit error rate; buried heterostructure; chip capacitance reduction; dynamic properties; high mesa structure; laser diode; light-emission/detection diode module; modulation bandwidth; photodetector; semiinsulating-BH type; subscriber TCM transmission systems; time compression multiplexing;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950141
