DocumentCode
1238751
Title
15 Gbit/s silicon bipolar amplifier IC using a novel mounting technique
Author
Hageraats, J. J E M ; Pruijmboom, Armand
Author_Institution
Wideband Commun. Syst., Philips Res. Lab., Eindhoven, Netherlands
Volume
31
Issue
3
fYear
1995
fDate
2/2/1995 12:00:00 AM
Firstpage
181
Lastpage
183
Abstract
A DC-coupled silicon bipolar amplifier IC, for operation in future multigigabit optical communication systems, has been fabricated using ⩾30 GHz double-polysilicon transistors. Using a novel HF connection technique for reducing the bondwire inductance, we have succeeded in the fabrication of a 14 dB gain amplifier IC, with a flatness better than ±0.5 dB, combined with a -3 dB bandwidth of 12.8 GHz. This is the highest bandwidth ever reported for a bonded amplifier circuit in any semiconductor technology
Keywords
bipolar analogue integrated circuits; digital communication; elemental semiconductors; integrated circuit interconnections; integrated circuit packaging; optical communication equipment; silicon; wideband amplifiers; 12.8 GHz; 14 dB; 15 Gbit/s; DC-coupled amplifier; HF connection technique; Si; bipolar amplifier IC; bondwire inductance reduction; broadband operation; double-polysilicon transistors; mounting technique; multigigabit optical communication systems;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950118
Filename
362575
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