Title :
GaAs micromachined widely tunable Fabry-Perot filters
Author :
Vail, E.C. ; Wu, M.S. ; Li, G.S. ; Eng, L. ; Chang-Hasnain, C.J.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
fDate :
2/2/1995 12:00:00 AM
Abstract :
The authors present a surface-normal micromachined GaAs Fabry-Perot filter with 70 nm of continuous tuning, 19 dB extinction ratio, 4.9 V of tuning voltage, and 50 pA tuning current. The device is polarisation insensitive, can be fabricated into two-dimensional arrays, is easy to couple into fibre, and requires only two masks with no critical alignments
Keywords :
Fabry-Perot resonators; III-V semiconductors; gallium arsenide; interference filters; micromachining; micromechanical resonators; mirrors; optical communication equipment; optical fabrication; tuning; wavelength division multiplexing; 4.9 V; 50 pA; DBR mirrors; Fabry-Perot filters; GaAs; continuous tuning; micromachined tunable filters; polarisation insensitive; two-dimensional arrays; widely tunable filters;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950102
