Title :
Low polarisation dependence (<0.3 dB) in an EA modulator using a polyimide-buried high-mesa ridge structure with an InGaAsP bulk absorption layer
Author :
Yamada, Koji ; Murai, Hitoshi ; Nakamura, Itaru ; Matsui, Yusuke ; Ogawa, Isamu
Author_Institution :
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo
fDate :
2/2/1995 12:00:00 AM
Abstract :
The electroabsorption modulator combining a polyimide-buried high-mesa ridge structure with an InGaAsP bulk absorption layer which the authors have developed demonstrates an extremely low polarisation-dependent loss of less than 0.3 dB with a practical and sufficient attenuation of 20 dB
Keywords :
III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; light polarisation; optical communication equipment; optical losses; optical waveguides; polymer films; ridge waveguides; 0.3 dB; EA modulator; InGaAsP; InGaAsP bulk absorption layer; electroabsorption modulator; low polarisation-dependent loss; polyimide-buried high-mesa ridge structure;
Journal_Title :
Electronics Letters
